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HRF302A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-244C(Z) Rev 3 Features
* Low forward voltage drop and suitable for high effifiency rectifying. * DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRF302A Laser Mark 302A Package Code DO-214
Outline
Cathode mark Mark
302A
1 2
Lot No.
1. Cathode 2. Anode
HRF302A
Absolute Maximum Ratings (Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V
*1 RRM
Value 20 3
Unit V A A C C
I o*1 I FSM Tj Tstg
*2
100 125 -40 to +125
Notes: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse current ESD-Capability Thermal resistance Symbol VF IR -- Rth(j-a) Rth(j-c) Note: 1. Glass epoxy board Min -- -- 250 -- -- Typ -- -- -- 100 34 Max 0.40 1.0 -- -- -- Unit V mA V Test Condition I F = 3A VR = 20V C = 200pF , R = 0 , Both forward and reverse direction 1 pulse.
*1
C/W Glass epoxy board Tc = 25C
Land size
3.5 6.8 2.0
Unit: mm
2
HRF302A
Main Characteristic
2
10
10 Pulse test
-2
Pulse test Ta=75C
Forward current I F (A)
10 Ta=75C 1.0
Reverse current IR (A)
10
-3
10
-1
Ta=25C
10
-4
Ta=25C
10
-2
10
-5
10
-3
0
0.1
0.2
0.3
0.4
0.5
0.6
10
-6
0
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
10 20 15 5 Reverse voltage V R (V)
25
Fig.2 Reverse current Vs. Reverse voltage
10
3
f=1MHz Pulse test
Capacitance C (pF)
10
2
10
1.0
10 Reverse voltage V R (V)
40
Fig.3 Capacitance Vs. Reverse voltage
3
HRF302A
Main Characteristic
2.5
0A t T Tj =25C D=
D=1/6
t T
2.0
0V
D=5/6
t T
Forward power dissipation Pd (W)
Reverse power dissipation Pd (W)
t
2.0
D=
1.5
T Tj =125C
D=2/3
D=1/3 Sin 1.5 D=1/2 DC 1.0
D=1/2 1.0 Sin
0.5
0.5
0 0 0.5 1.0 1.5 2.0 2.5 3.0
0 0 5 10 15 20 Reverse voltage V R(V) Fig.5 Reverse power dissipation Vs. Reverse voltage
Forward current I F (A) Fig.4 Forward p ower dissipation Vs. Forward current
3.5 3.0 D=1/3
Average forward current IO (A)
3.5
VR=VRRM/2 Tj =125C
DC
Average forward current IO (A)
3.0
DC
VR=VRRM/2 Tj =125C Glass epoxy PCB
D=1/2 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 Case temperature Tc (C) D=1/6 Sin
2.5 D=1/2 2.0 D=1/3 1.5 D=1/6 1.0 Sin 0.5 0 -25
0
25
50
75
100
125
Ambient temperature Ta (C) Fig.7 Average forward current Vs. Ambient temperature
Fig.6 Average forward current Vs. Case temperature
4
HRF302A
Package Dimensions
Unit : mm
Cathode Mark 3.0 0.2 4.0 0.2
1
302A
7.0 0.2 8.0 0.3
2
Lot No. 1 Cathode 2 Anode
0.25
1.2 0.3
2.1 0.2
Hitachi Code JEDEC Code EIAJ Code Weight (g)
DO-214 DO-214 -- 0.16
5

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